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CVD銅基單層氮化硼薄膜

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  • 公司名稱 上海巨納科技有限公司
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  • 更新時(shí)間 2020/12/26 13:56:24
  • 訪問(wèn)次數(shù) 321

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Single layer h-BN （Boron Nitride） monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct bａnd gap of 6 eV with strong ionic bonding between B-N atoms.

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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct bａnd gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct bａnd gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN

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